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BU407 NPN Transistor
A three-layer NPN device with versatile working range and amplification capabilities.
- Transistor Polarity: NPN
- Collector-Emitter Voltage (VCEO): 150VDC
- Collector-Base Voltage (VCBO): 330VDC
- Emitter-Base Voltage (VEBO): 6VDC
- Continuous Collector Current (IC): 10ADC
- Continuous Base Current (IB): 4ADC
- Operating Temperature Range: -65°C to 150°C
- Power Dissipation (Pd): 60W
- Current Gain Bandwidth (fT): 10MHz
Features:
- Low saturation voltage
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
BU407 is a three-layer NPN device that operates within a versatile working range. The collector current (IC) is a function of the base current (IB), facilitating amplified changes in IC for a given collector-emitter voltage (VCE).
It offers easy handling and transportation, making it a convenient choice for various electronic applications.
For more details or bulk pricing, contact our sales team directly at sales02@thansiv.com or call +91-8095406416.
* Images are for illustration only; actual product may vary.