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BS170 High Voltage MOSFET
New generation MOSFET with advanced charge balance mechanism for superior performance.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 60V
- Continuous Drain Current (Id): 500mA
- Drain-Source Resistance (Rds On): 5Ohms
- Gate-Source Voltage (Vgs): 20V
- Configuration: Single
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (Pd): 350mW
Top Features:
- Low offset voltage
- Full-voltage operation
- Easily driven without buffer
- Low error voltage
BS170 is the new generation of high voltage MOSFET family, designed for various AC/DC power conversion in switching mode operations. It offers outstanding low on-resistance and lower gate charge performance. The advanced technology used in BS170 minimizes conduction loss, provides superior switching performance, and can withstand extreme dv/dt rate and higher avalanche energy. This makes it very suitable for system miniaturization and higher efficiency requirements.
For more details or bulk pricing, contact our sales team directly at sales02@thansiv.com or call +91-8095406416.
*Images are for illustration only; actual product may vary.