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BF199 Semiconductor Transistor
A versatile semiconductor device for signal amplification and power switching.
- Transistor Polarity: PNP
- Collector-Base Voltage (VCBO): 40V
- Collector-Emitter Voltage (VCEO): 25V
- Emitter-Base Voltage (VEBO): 4V
- Continuous Collector Current (IC): 50mA
- Collector-Emitter Saturation Voltage (VCE(sat)): 0.2V
- Transition Frequency (fT): 1100MHz
- DC Current Gain (hFE): 38
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (PD): 350mW
Top Features:
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
BF199 is a semiconductor device used for amplifying or switching electronic signals and electrical power. It consists of semiconductor material with at least three terminals for external circuit connections. By applying voltage or current to one pair of terminals, it controls the current through another pair, allowing signal amplification due to higher output power than input power.
While some transistors are individually packaged, many are integrated into circuits for various applications.
Related Documents: BF199 Transistor Datasheet
*Images are for illustration only; actual product may vary.