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BDX54C Three-Layer PNP Transistor
A versatile PNP transistor with low saturation voltage and high operating range.
- Transistor Polarity: PNP
- Collector-Emitter Voltage (VCEO): 100V
- Collector-Base Voltage (VCBO): 100V
- Continuous Collector Current (IC): 8A
- Continuous Base Current (IB): 0.2mA
- Operating Temperature Range: -65 to 150°C
- Power Dissipation (PD): 60W
- DC Current Gain (hFE): 750
- Emitter-Base Voltage (VEBO): 5V
Features:
- Low saturation voltage
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
BDX54C is a three-layer PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.
Easy to carry and handle.
Related Documents: BDX54C Transistor Datasheet
*Images are for illustration only; actual product may vary.