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BDX34C Three Layer PNP Device
A three-layer PNP device with low saturation voltage and high safe operating area.
- Transistor Polarity: PNP
- Collector-Emitter Voltage (VCEO): 100V
- Collector-Base Voltage (VCBO): 100V
- Continuous Collector Current (Ic): 10A
- Continuous Base Current (Ib): 0.25A
- Operating Temperature Range: -65 to 150°C
- Power Dissipation (Pd): 70W
- DC Current Gain (hFE): 750
- Thermal Resistance Junction-case: 1.78°C/W
Features:
- Low saturation voltage
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
BDX34C is a three-layer PNP device. Within the working range, the collector current IC is a function of the base current IB, with a change in the base current resulting in a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.
Easy to carry and handle. Ideal for low distortion complementary designs.
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Images are for illustration only; actual product may vary.