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BDW94C Three Layer PNP Transistor
A versatile PNP device with low saturation voltage and high safe operating area.
- Transistor Polarity: PNP
- Collector-Emitter Voltage (VCEO): 100V
- Collector-Base Voltage (VCBO): 100V
- Continuous Collector Current (Ic): 12A
- Continuous Base Current (Ib): 0.2A
- Operating Temperature Range: -65 to 150°C
- Power Dissipation (Pd): 80W
- DC Current Gain (hFE): 1000-20K
- Thermal Resistance Junction-case: 1.56°C/W
Features:
- Low saturation voltage
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
- Easy to carry and handle
The BDW94C is a three-layer PNP transistor that exhibits a unique characteristic where the collector current IC varies based on the base current IB. This results in an amplified change in the collector current for a specified collector-emitter voltage VCE.
For more detailed technical information, refer to the BDW94C Transistor Datasheet.
* Images are for illustration only; actual product may vary.