BD682
A three layer PNP device with low saturation voltage and high current amplification capabilities.
- Transistor Polarity: PNP
- Collector-Emitter Voltage (VCEO): 100V
- Collector-Base Voltage (VCBO): 100V
- Emitter Base Voltage (VEBO): 5V
- Continuous Collector Current (Ic): 4A
- Continuous Base Current (Ib): 0.1A
- Operating Temperature Range: -65 to 150°C
- Power Dissipation (Pd): 40W
- DC Current Gain (hFE): 750
Features:
- Low saturation voltage
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
The BD682 is a three-layer PNP device capable of providing amplified changes in collector current based on the base current. It boasts a low saturation voltage, making it ideal for designs requiring high current amplification. With a continuous collector current of 4A and a wide operating temperature range of -65 to 150°C, it offers reliable performance across various applications.
Additionally, the BD682 features a continuous base current of 0.1A and a DC current gain (hFE) of 750, ensuring efficient and stable operation. Whether you need a transistor for low distortion complementary designs or applications with specific voltage requirements, the BD682 is designed to deliver consistent performance.
Related Documents:
- BD682 Transistor Datasheet
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