×
BD679
A three layer NPN transistor for low distortion complementary designs.
- Transistor Polarity: NPN
- Collector-Emitter Voltage (VCEO): 80V
- Collector-Base Voltage (VCBO): 80V
- Emitter-Base Voltage (VEBO): 5V
- Continuous Collector Current (Ic): 4A
- Continuous Base Current (Ib): 0.1A
- Operating Temperature Range: -65°C - 150°C
- Power Dissipation (Pd): 40W
- DC Current Gain (hFE): 750
Features:
- Low saturation voltage
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
BD679 is a three layer NPN device within the working range. The collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE. Easy to carry and handle.
For BD679 Transistor Datasheet, click here.
Images are for illustration only; actual product may vary.