×
BD241C Transistor
A three-layer NPN device with amplified collector current for a given VCE.
- Transistor Polarity: NPN
- Collector–Emitter Voltage (VCEO): 100V
- Emitter–Base Voltage (VEBO): 5V
- Continuous Collector Current (IC): 3A
- Continuous Base Current (IB): 1A
- DC Current Gain (hFE): 25
- Operating Temperature Range: -65 to 150°C
- Power Dissipation (Pd): 40W
Features:
- Low saturation voltage
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
BD241C is a three-layer NPN device where the collector current IC is a function of the base current IB. A change in the base current results in an amplified change in the collector current for a specified VCE. This transistor is easy to carry and handle, making it convenient for various applications.
For more details or bulk pricing, contact our sales team: sales02@thansiv.com, +91-8095406416
Images are for illustration only; actual product may vary.