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BD239C
Three-layer NPN Transistor with Amplified Collector Current
- Transistor Polarity: NPN
- Collector-Emitter Voltage (VCEO): 100V
- Collector-Base Voltage (VCBO): 115V
- Continuous Collector Current (Ic): 2A
- Continuous Base Current (Ib): 0.6A
- DC Current Gain (hFE): 40
- Operating Temperature Range: -65 - 150°C
- Power Dissipation (Pd): 30W
- Junction Temperature: 150°C
Features
- Low saturation voltage
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
BD239C is a three-layer NPN device within the working range. The collector current IC is a function of the base current IB, with a change in the base current resulting in a corresponding amplified change in the collector current for a given collector-emitter voltage VCE. This transistor is easy to carry and handle.
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Images are for illustration only; actual product may vary.