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BD237 Three Layer Transistor
A versatile NPN or PNP device with excellent amplification capabilities.
- Transistor Polarity: NPN
- Collector-Emitter Voltage (VCEO): 100V
- Collector-Base Voltage (VCBO): 100V
- Continuous Collector Current (Ic): 2A
- DC Current Gain (hFE): 40
- Operating Temperature Range: -65°C to 150°C
- Power Dissipation (Pd): 25W
- Collector Peak Current (ICM): 6A
- Junction Temperature (TJ): 150°C
Features:
- Low saturation voltage
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
BD237 is a three-layer NPN or PNP device within the working range. The collector current (IC) is a function of the base current (IB). A change in the base current results in a corresponding amplified change in the collector current for a given collector-emitter voltage (VCE).
Easy to carry and handle, this transistor is ideal for various applications.
Related Documents:
- BD237 Transistor Datasheet
Images are for illustration only; actual product may vary.