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BC637 Semiconductor Transistor
Used for amplifying or switching electronic signals with advanced technology.
- Transistor Polarity: NPN
- Collector-Emitter Breakdown Voltage (BVCEO): 60V
- Collector-Emitter Voltage (VCEO): 60V
- Emitter-Base Voltage (VEBO): 5V
- Continuous Collector Current (IC): 1A
- Base Current (IB): 100mA
- Transition Frequency (fT): 100MHz
- DC Current Gain (hFE): 40-160
- Operating Temperature Range: -65°C to 150°C
- Collector Power Dissipation (PC): 1W
Features:
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
BC637 is a semiconductor device designed with at least three terminals to facilitate connection to an external circuit. By controlling the current through one pair of terminals with a voltage or current applied to another pair, it can amplify signals efficiently. The transistor offers high power and current handling capability, making it ideal for various electronic applications.
While some transistors are standalone, many are integrated into circuits for compact designs and improved functionality.
Related Documents:
- BC637 Transistor Datasheet
*Images are for illustration only; actual product may vary.