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BC636 Semiconductor Transistor
A semiconductor device for signal amplification and power switching.
- Transistor Polarity: PNP
- Collector-Emitter Breakdown Voltage (BVCEO): 45V
- Collector-Emitter Voltage (VCEO): 45V
- Emitter-Base Voltage (VEBO): 5V
- Continuous Collector Current (IC): 1A
- Base Current (IB): 100mA
- Transition Frequency (fT): 100MHz
- DC Current Gain (hFE): 40-250
- Operating Temperature Range: -65 - 150°C
- Power Dissipation (PD): 1W
Features:
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
BC636 is composed of semiconductor material with at least three terminals for external circuit connection. It allows higher output power than input power, enabling signal amplification. While some transistors are standalone, many are integrated into circuits.
Related Documents: BC636 Transistor Datasheet
Images are for illustration only; actual product may vary.