4N35 Optocoupler
Gallium arsenide LED and silicon NPN phototransistor optocoupler with high isolation performance.
- Isolation Test Voltage: 5300 VRMS
- Interfaces: Common logic families
- Coupling Capacitance: < 0.5 pF
- Package: Industry Standard Dual-in line 6-pin
Top Features:
- 5300 VRMS isolation test voltage
- Interfaces with common logic families
- < 0.5 pF input-output coupling capacitance
- Dual-in line 6-pin package
The 4N35 optocoupler consists of a gallium arsenide infrared LED and a silicon NPN phototransistor. Underwriters Laboratories (UL) lists them to comply with a 5300 VRMS isolation test voltage. This isolation is achieved through a double molding isolation manufacturing process. Compliance with DIN EN 60747-5-2 (VDE0884)/ DIN EN 60747-5-5 pending partial discharge isolation specification is available by ordering option 1.
The devices are lead formed for surface mounting and come in tape and reel or standard tube shipping containers. Agency approvals include Underwriters Laboratory File #E52744 and DIN EN 60747-5-2 (VDE0884) with DIN EN 60747-5-5 pending. Applications include AC mains detection, reed relay driving, and switch mode power supply feedback.
Specifications:
- Reverse Voltage: 6 V
- Forward Current: 60 mA
- Surge Current: 2.5 A
- Power Dissipation: 100 mW
- Collector-emitter Breakdown Voltage: 70 V
- Emitter-base Breakdown Voltage: 7 V
- Collector Current: 100 mA
Related Document: 4N35 IC Data Sheet
* Images are for illustration only; actual product may vary.