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38N30 N-Channel Power Field Effect Transistors
Enhanced technology for superior performance in power supply applications.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 300V
- Continuous Drain Current (Id): 38.4A
- Drain-Source Resistance (Rds On): 85mOhms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 120 nC
- Operating Temperature Range: -55°C to 150°C
- Power Dissipation (Pd): 290W
Top Features:
- Low gate charge (Typ. 90 nC)
- Low crss (Typ. 70 pF)
- 100% avalanche tested
- RoHS compliant
This N-Channel enhancement mode power field effect transistor is designed with advanced technology to reduce on-state resistance significantly, improving switching performance and providing robustness against high-energy pulses in the avalanche and commutation mode. Ideal for applications in high-efficiency switch mode power supply, power factor correction, and electronic lamp ballast based on a half bridge.
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*Images are for illustration only; actual product may vary.