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2SK962
New Generation High Voltage MOSFET with Advanced Charge Balance Mechanism
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Continuous Drain Current (Id): 8A
- Drain-Source Resistance (Rds On): 2 Ohms
- Gate-Source Voltage (Vgs): 20V
- Configuration: Single
- Operating Temperature Range: -55°C to 150°C
- Power Dissipation (Pd): 150W
Top Features:
- High speed switching
- Low on-resistance
- No secondary breakdown
- Low driving power
2SK962 is a new generation of high voltage MOSFET with advanced charge balance mechanism. It offers outstanding low on-resistance and lower gate charge performance. The technology used minimizes conduction loss, ensures superior switching performance, and can withstand extreme dv/dt rate and higher avalanche energy. This MOSFET is ideal for various AC/DC power conversion applications in switching mode operation for system miniaturization and higher efficiency.
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*Images are for illustration only; actual product may vary.