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2SK3878 High Voltage MOSFET
New generation high voltage MOSFET with advanced charge balance mechanism.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Continuous Drain Current (Id): 9A
- Drain-Source Resistance (Rds On): 1 Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 60 nC
- Operating Temperature Range: -55°C to 150°C
- Power Dissipation (Pd): 150W
Features:
- Low drain-source ON resistance
- High forward transfer admittance
- Low leakage current
- Enhancement mode
2SK3878 is part of a new generation of high voltage MOSFETs with an advanced charge balance mechanism, offering exceptional low on-resistance and reduced gate charge for superior performance. This technology is optimized for minimal conduction loss, enhanced switching capabilities, and the ability to handle extreme dv/dt rates and higher avalanche energy. Ideal for various AC/DC power conversion applications in switching mode operation to achieve system miniaturization and increased efficiency.
For more details or bulk pricing, please contact our sales team directly at sales02@thansiv.com or call +91-8095406416.
* Images are for illustration only; actual product may vary.