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2SK3569 High Voltage MOSFET
New generation high voltage MOSFET with advanced charge balance mechanism.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 600V
- Continuous Drain Current (Id): 10A
- Drain-Source Resistance (Rds On): 0.54Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 42 nC
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (Pd): 45W
Top Features:
- Low drain-source ON resistance
- High forward transfer admittance
- Low leakage current
- Enhancement mode
2SK3569 is the new generation of high voltage MOSFET that utilizes advanced charge balance mechanism for exceptional low on-resistance and lower gate charge performance. Tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Related Documents: 2SK3569 MOSFET Datasheet
Images are for illustration only; actual product may vary.