×
2SK2717 High Voltage MOSFET
New generation MOSFET with advanced charge balance mechanism for superior performance.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Continuous Drain Current (Id): 5A
- Drain-Source Resistance (Rds On): 2.5Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 45 nC
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (Pd): 45W
Features:
- Low drain-source ON resistance
- High forward transfer admittance
- Low leakage current
- Enhancement mode
2SK2717 is part of a new generation of high voltage MOSFETs designed for various AC/DC power conversion applications. With an advanced charge balance mechanism, it offers outstanding low on-resistance and lower gate charge performance. The technology implemented in this MOSFET minimizes conduction loss, enhances switching performance, and ensures durability even under extreme conditions like high dv/dt rate and higher avalanche energy. This makes it ideal for applications requiring system miniaturization and higher efficiency.
Need more details or interested in bulk pricing? Reach out to our sales team directly - sales02@thansiv.com +91-8095406416
*Images are for illustration only; actual product may vary.