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2SK2698 N-Channel Power Field Effect Transistors
Enhancement mode transistors with low on-state resistance and high switching performance.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 500V
- Continuous Drain Current (Id): 15A
- Drain-Source Resistance (Rds On): 0.35Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 58 nC
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (Pd): 150W
Features:
- Low drain-source ON resistance
- High forward transfer admittance
- Low leakage current
- Enhancement mode
2SK2698 N-Channel enhancement mode power field effect transistors are produced using Toshiba proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
For more details or bulk pricing, contact our sales team at sales02@thansiv.com or dial +91-8095406416.
* Images are for illustration only; actual product may vary.