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K2611S N-Channel Enhancement Mode Power Field Effect Transistors
Produced using advanced DMOS technology for high efficiency power supplies.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Continuous Drain Current (Id): 9A
- Drain-Source Resistance (Rds On): 1.1 Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 58 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 150W
Features:
- 9A, 900V
- Ultra-low Gate charge (Typical 58nC)
- Fast Switching Capability
- 100% Avalanche Tested
N-Channel enhancement mode power field effect transistors using Winsemi's proprietary DMOS technology are designed to minimize on-state resistance, offer superior switching performance, and handle high energy pulses effectively in avalanche and commutation modes. These devices are ideal for high-efficiency switch mode power supplies.
For more information or bulk pricing, reach out to our sales team: sales02@thansiv.com or +91-8095406416
Images are for illustration only; actual product may vary.