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2SK1317 Power MOSFET
An efficient and reliable device with high breakdown voltage and fast switching speed.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 1500V
- Continuous Drain Current (Id): 2.5A
- Drain-Source Resistance (Rds On): 12 Ohms
- Gate-Source Voltage (Vgs): 20V
- Configuration: Single
- Operating Temperature Range: -55°C to 150°C
- Power Dissipation (Pd): 100W
Top Features:
- High breakdown voltage VDSS = 1500V
- High-speed switching
- Low drive current
- Suitable for switching regulator, DC-DC converter, and motor driver
2SK1317 utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Related Documents: 2SK1317 MOSFET Datasheet
*Images are for illustration only; actual product may vary.