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2SD965 Semicondutor Device
Semiconductor device for amplifying or switching electronic signals and power.
- Transistor Polarity: NPN
- Collector-Base Voltage (VCBO): 40V
- Collector-Emitter Voltage (VCEO): 20V
- Emitter-Base Voltage (VEBO): 7V
- Continuous Collector Current (IC): 5A
- Collector current-Peak (ICP): 8A
- Transition Frequency (fT): 150MHz
- DC Current Gain (hFE): 40-240
- Operating Temperature Range: -55 - 150°C
- Collector Power Dissipation (PC): 0.75W
Features:
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
2SD965 is composed of semiconductor material with at least three terminals for external circuit connection. It allows for controlling current through one pair of terminals based on the voltage or current applied to another pair. With the ability to amplify the output power over the input power, this transistor is a versatile component in signal processing.
While some transistors are individually packaged, many are integrated into circuits for various applications in electronics.
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Images are for illustration only; actual product may vary.