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2SA1943 Semiconductor Transistor
A powerful semiconductor device for signal amplification and switching
- Transistor Polarity: PNP
- Collector-Base Voltage (VCBO): -230V
- Collector-Emitter Voltage (VCEO): -230V
- Emitter-Base Voltage (VEBO): -5V
- Continuous Collector Current (IC): -15A
- Base Current (IB): -1.5A
- Transition Frequency (fT): 30MHz
- DC Current Gain (hFE): 55-160
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (PD): 150W
Key Features:
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
2SA1943 is a semiconductor device designed to amplify or switch electronic signals and electrical power. It consists of semiconductor material with at least three terminals for external circuit connections. By applying voltage or current to one pair of terminals, the current through another pair is controlled, enabling signal amplification. The transistor can handle higher output power than input power, providing signal amplification capabilities. While some transistors are individually packaged, many are embedded in integrated circuits.
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* Images are for illustration only; actual product may vary.