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2N6109 Semiconductor Device
A semiconductor device for amplifying and switching electronic signals and power.
- Transistor Polarity: PNP
- Collector-Base Voltage (VCBO): 60VDC
- Collector-Emitter Voltage (VCEO): 50VDC
- Emitter-Base Voltage (VEBO): 5VDC
- Continuous Collector Current (IC): 7A
- Output Capacitance (Cobo): 250pF
- Transition Frequency (fT): 10MHz
- DC Current Gain (hFE): 20
- Operating Temperature Range: -65 - 150°C
- Power Dissipation (PD): 40W
Features:
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
2N6109 is composed of semiconductor material with at least three terminals for external circuit connections. It controls the current through one pair of terminals based on the voltage or current applied to another pair. This allows the transistor to amplify signals as the output power can be higher than the input power. While some transistors are individually packaged, many are integrated into circuits.
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Images are for illustration only; actual product may vary.