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2N6107 Semiconductor Transistor
A versatile semiconductor device for signal amplification and switching.
- Transistor Polarity: PNP
- Collector-Base Voltage (VCBO): 80VDC
- Collector-Emitter Voltage (VCEO): 70VDC
- Emitter-Base Voltage (VEBO): 5VDC
- Continuous Collector Current (IC): 7A
- Output Capacitance (Cobo): 250pF
- Transition Frequency (fT): 10MHz
- DC Current Gain (hFE): 20
- Operating Temperature Range: -65 - 150°C
- Power Dissipation (PD): 40W
Features:
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
2N6107 is a semiconductor device commonly used for signal amplification and switching. It comprises semiconductor material with at least three terminals for external circuit connection. By applying a voltage or current to one set of terminals, the current through another set is controlled, enabling signal amplification. The transistor can handle higher power at the output compared to the input, thus amplifying the signal. While some transistors are individually packaged, many are integrated into circuits.
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*Images are for illustration only; actual product may vary.