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2N5551 Semiconductor Transistor
An electronic component for signal amplification and power switching
- Transistor Polarity: NPN
- Collector-Base Voltage (VCBO): 180V
- Collector-Emitter Voltage (VCEO): 160V
- Emitter-Base Voltage (VEBO): 6V
- Continuous Collector Current (IC): 600mA
- Output Capacitance (Cobo): 6pF
- Transition Frequency (fT): 100MHz
- DC Current Gain (hFE): 80-250
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (PD): 625mW
Features:
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
2N5551 is a semiconductor device used for amplifying or switching electronic signals and power. It consists of semiconductor material with three terminals for external circuit connections. By applying voltage or current to one terminal pair, the current through another pair is controlled, enabling signal amplification. It has high power and current handling capability. While some transistors are standalone, many are integrated into circuits.
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*Images are for illustration only; actual product may vary.