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2N5298 Semiconductor Transistor
A semiconductor device for signal amplification and switching.
- Transistor Polarity: NPN
- Collector-Base Voltage (VCBO): 80V
- Collector-Emitter Voltage (VCEO): 60V
- Continuous Base Current (IB): 2A
- Continuous Collector Current (IC): 4A
- Thermal Resistance: 70°C/W
- Emitter Cut-off Current (IEBO): 1mA
- DC Current Gain (hFE): 20-80
- Operating Temperature Range: -65 - 150°C
- Power Dissipation (PD): 36W
Features:
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
2N5298 is composed of semiconductor material with at least three terminals. It can amplify a signal as the output power can be higher than the input power due to controlled current. Many of these transistors are integrated into circuits.
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Images are for illustration only; actual product may vary.