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2N5296
A semiconductor device for amplifying or switching electronic signals and power.
- Transistor Polarity: NPN
- Collector-Base Voltage (VCBO): 60V
- Collector-Emitter Voltage (VCEO): 40V
- Continuous Base Current (IB): 2A
- Continuous Collector Current (IC): 4A
- Thermal Resistance: 70°C/W
- Emitter cut-off current (IEBO): 1mA
- DC Current Gain (hFE): 30-120
- Operating Temperature Range: -65 - 150°C
- Power Dissipation (PD): 36W
Features:
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
2N5296 is composed of semiconductor material with at least three terminals. A voltage or current applied to one pair of terminals controls the current through another pair, allowing for signal amplification. The controlled power output can exceed the input power, enabling signal amplification effectively.
While some transistors are individually packaged, many are integrated into circuits for various applications.
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*Images are for illustration only; actual product may vary.