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2N5294 Semiconductor Device
A semiconductor device used for signal amplification and power switching.
- Transistor Polarity: NPN
- Collector-Base Voltage (VCBO): 80V
- Collector-Emitter Voltage (VCEO): 70V
- Continuous Base Current (IB): 2A
- Continuous Collector Current (IC): 4A
- Thermal Resistance: 70°C/W
- Emitter cut-off current (IEBO): 1mA
- DC Current Gain (hFE): 30-120
- Operating Temperature Range: -65 - 150°C
- Power Dissipation (PD): 36W
Features:
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
The 2N5294 semiconductor device is composed of semiconductor material with at least three terminals for external circuit connection. By controlling the current through one pair of terminals with voltage or current applied to another pair, it can amplify signals with higher power output than input. Transistors can be individually packaged or embedded in integrated circuits.
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* Images are for illustration only; actual product may vary.