×
2N4393 Semiconductor Device
A powerful semiconductor device for signal amplification and switching
- Transistor Polarity: N-Channel
- Gate-Source Breakdown Voltage (BVGSS): 40V
- Drain-Source Current (IDSS): 30mA
- Drain-Source Resistance (Rds On): 100Ohms
- Input Capacitance (Ciss): 14pF
- Gate to Source Forward Voltage (VGS(F)): 1V
- Drain to Source ON Voltage (VDS(ON)): 0.4V
- Reverse Transfer Capacitance (Crss): 3.5pF
- Operating Temperature Range: -55 - 125°C
- Power Dissipation (PD): 1.8W
Key Features:
- Metal can package
- Advanced process technology
- Low error voltage
- Fast switching speed
The 2N4393 semiconductor device is used for amplifying or switching electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for external circuit connection. With controlled power higher than the input power, the transistor can amplify signals. Whether individually packaged or integrated into circuits, it delivers high power and current handling capability.
For more details or bulk pricing, contact our sales team via sales02@thansiv.com or call +91-8095406416.
* Images are for illustration only; actual product may vary.