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2N4392 Semiconductor Device
A versatile semiconductor device for signal amplification and power switching.
- Transistor Polarity: N-Channel
- Gate-Source Breakdown Voltage (BVGSS): 40V
- Drain-Source Current (IDSS): 75mA
- Drain-Source Resistance (Rds On): 60Ohms
- Input Capacitance (Ciss): 14pF
- Gate to Source Forward Voltage (VGS(F)): 1V
- Drain to Source ON Voltage (VDS(ON)): 0.4V
- Reverse Transfer Capacitance (Crss): 3.5pF
- Operating Temperature Range: -55 - 125°C
- Power Dissipation (PD): 1.8W
Features:
- Metal TO-18 can package
- Advanced process technology
- Low error voltage
- Fast switching speed
2N4392 is a semiconductor device used for signal amplification and power switching in electronic circuits. It is designed with at least three terminals for easy connection to external circuits. By controlling the current through one pair of terminals with a voltage or current applied to another pair, the transistor amplifies the output power compared to the input power, making it a crucial component in various applications. While some transistors are individually packaged, many are integrated into circuits, offering versatility in design and functionality.
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Images are for illustration only; actual product may vary.