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2N3053 Semiconductor Device
Semiconductor device used for signal amplification and switching.
- Transistor Polarity: NPN
- Collector-Base Voltage (VCBO): 60VDC
- Collector-Emitter Voltage (VCEO): 40VDC
- Emitter-Base Voltage (VEBO): 5VDC
- Continuous Collector Current (IC): 700mA
- Input Capacitance (Cib): 80pF
- Output Capacitance (Cob): 15pF
- DC Current Gain (hFE): 50-250
- Operating Temperature Range: -65 to 200°C
- Power Dissipation (PD): 5W
Features:
- Metal TO-39 can package
- Advanced process technology
- Low error voltage
- Fast switching speed
2N3053 is composed of semiconductor material with at least three terminals for circuit connection. It amplifies signals and switches electrical power based on the input current or voltage. The transistor can handle higher output power than input, allowing signal amplification. While some transistors are individually packaged, many are integrated into circuits.
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Images are for illustration only; actual product may vary.