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2N2907 Transistor
A semiconductor device for amplifying or switching electronic signals and power.
- Transistor Polarity: PNP
- Collector-Base Voltage (VCBO): 60VDC
- Collector-Emitter Voltage (VCEO): 60VDC
- Emitter-Base Voltage (VEBO): 5VDC
- Continuous Collector Current (IC): 600mA
- Input Capacitance (Cib): 30pF
- Output Capacitance (Cob): 8pF
- DC Current Gain (hFE): 100-300
- Operating Temperature Range: -65 - 200°C
- Power Dissipation (PD): 1W
Features:
- Metal TO-18 can package
- Advanced process technology
- Low error voltage
- Fast switching speed
2N2907 is composed of semiconductor material with at least three terminals. It can amplify a signal as the output power can be higher than the input power due to its controlled current. Many of these transistors are found embedded in integrated circuits today.
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* Images are for illustration only; actual product may vary.