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2N2369 Semiconductor Device
A semiconductor device for amplifying or switching electronic signals and power.
- Transistor Polarity: NPN
- Collector-Base Voltage (VCBO): 40VDC
- Collector-Emitter Voltage (VCEO): 15VDC
- Emitter-Base Voltage (VEBO): 4.5VDC
- Continuous Collector Current (IC): 200mA
- Input Capacitance (Cib): 4pF
- Output Capacitance (Cob): 4pF
- DC Current Gain (hFE): 40-120
- Operating Temperature Range: -65 - 200°C
- Power Dissipation (PD): 0.36W
Features:
- Metal TO-18 Can Package
- Advanced process technology
- Low error voltage
- Fast switching speed
The 2N2369 semiconductor device is a vital component composed of semiconductor material with at least three terminals. By controlling the current through one pair of terminals with a voltage or current applied to another pair, it can amplify signals effectively. This transistor offers high power and current handling capability, ideal for various electronic applications.
Today, transistors like the 2N2369 can be found both individually packaged and embedded within integrated circuits, showcasing their versatility and importance in modern electronics.
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* Images are for illustration only; actual product may vary.