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2N2222 Semiconductor Device
A semiconductor device used for signal amplification and switching
- Transistor Polarity: NPN
- Collector-Base Voltage (VCBO): 60V
- Collector-Emitter Voltage (VCEO): 30V
- Emitter-Base Voltage (VEBO): 5V
- Continuous Collector Current (IC): 800mA
- Input Capacitance (Cib): 30pF
- Output Capacitance (Cob): 8pF
- DC Current Gain (hFE): 300
- Operating Temperature Range: -65 - 200°C
- Power Dissipation (PD): 1.2W
Features:
- Metal Can Package
- Advanced process technology
- Low error voltage
- Fast switching speed
2N2222 is composed of semiconductor material with three terminals for circuit connection. It amplifies output power higher than input power through controlled current. Some transistors are individually packaged while many are integrated circuits.
**Images are for illustration only; actual product may vary.**