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2N2219 Semiconductor Device
A semiconductor device for amplifying or switching electronic signals and power.
- Transistor Polarity: NPN
- Collector-Base Voltage (VCBO): 75VDC
- Collector-Emitter Voltage (VCEO): 50VDC
- Emitter-Base Voltage (VEBO): 6VDC
- Continuous Collector Current (IC): 800mA
- Input Capacitance (Cib): 25pF
- Output Capacitance (Cob): 8pF
- DC Current Gain (hFE): 35
- Operating Temperature Range: -65 - 200°C
- Power Dissipation (PD): 3W
Features:
- Metal Can Package
- Advanced process technology
- Low error voltage
- Fast switching speed
2N2219 is composed of semiconductor material with at least three terminals for external circuit connection. It allows higher output power than input power, enabling signal amplification. While some transistors are individually packaged, many are integrated into circuits.
For more details or bulk pricing, contact our sales team at sales02@thansiv.com or +91-8095406416.
Images are for illustration only; actual product may vary.