IN5822 Series Schottky Barrier Power Diode
High-efficiency power diode for low-voltage applications
- Peak Repetitive Reverse Voltage: 40 V
- Working Peak Reverse Voltage: 40 V
- DC Blocking Voltage: 40 V
- RMS Reverse Voltage: 28 V
- Non-Repetitive Peak Reverse Voltage: 48 V
- Average Rectified Output Current: 3 A
- Non-Repetitive Peak Forward Surge Current: 80 A
- Operating Junction Temperature Range: -65 to +125 °C
- Storage Temperature Range: -65 to +125 °C
- Packaging: Shipped in plastic bags, 500 per bag
- Additional Packaging Option: Available in Tape and Reel, 1500 per reel (add "RL" suffix to part number)
Top Features:
- Extremely Low VF
- Low Power Loss/High Efficiency
- Low Stored Charge, Majority Carrier Conduction
- Corrosion Resistant Epoxy Molded Case
The IN5822 series utilizes the Schottky Barrier principle with a large area metal-to-silicon construction. It features chrome barrier metal, epitaxial design with oxide passivation, and metal overlap contact. This power diode is perfect for rectifiers in low-voltage, high-frequency inverters, free-wheeling diodes, and polarity protection diodes.
With a weight of approximately 1.1 grams, the diode is housed in an epoxy molded case that is corrosion-resistant. The terminal leads are easily solderable, and the diode is Pb-Free. It has a lead temperature of 260°C max for 10 seconds, with the cathode indicated by a polarity band.
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